Tamalika Banerjee and colleagues demonstrated the ability to manipulate the spin state in an oxide semiconductor in their latest publication in Physical Review Letters

The ability to manipulate the spin state in semiconductors, at room temperature, is challenging and necessary for next generation spintronic devices. In this work (PRL 115, 136601, 2015) researchers at the Physics of Nanodevices group (Banerjee group) have demonstrated the ability to manipulate the spin state in an oxide semiconductor, using electric field via Rashba spin orbit coupling. This opens a novel route to develop a spin-logic device without the need of additional gate electrode and furthers application possibilities in spintronics using such correlated oxide materials.