New Publication: Magneto-Ionic Control of Spin Polarization in Multiferroic Tunnel Junctions
Ferroelectri (FE) synaptic (memristive) devices are fast and energy efficient. The plasticity (change in resistance) originates from the Tunneling Electroresistance Effect (TER). CogniGron researchers have shown that TER can be as large as 10000 in tunnel junctions made with only 2 nm thick Hafnia-based FE tunnel barriers. Thanks to the unique properties of FE Hafnia, the junctions are so resistive that they can be electroded and wired-bonded, one of the greatest challanges in other FE tunnel junctions.
Reference: Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maraoutian, Guillaume Agnus, Philipe Lecoeur & Beatriz Noheda: Magneto-Ionic Control of Spin Polarization in Multiferroic Tunnel Junctions, npj Quantum Materials 17 December 2019.
Last modified: | 23 December 2019 2.21 p.m. |
More news
-
10 June 2024
Swarming around a skyscraper
Every two weeks, UG Makers puts the spotlight on a researcher who has created something tangible, ranging from homemade measuring equipment for academic research to small or larger products that can change our daily lives. That is how UG...
-
21 May 2024
Results of 2024 University elections
The votes have been counted and the results of the University elections are in!